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 VTB Process Photodiodes
VTB8440, 8441
PACKAGE DIMENSIONS inch (mm)
CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -20C to 75C -20C to 75C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22)
VTB8440
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 50 5.9 x 10-14 (Typ.) 3.9 x 10
12 (Typ.)
VTB8441
UNITS Max. .23 Min. 35 Typ. 45 .12 490 -2.0 2000 100 1.4 -8.0 1.0 .10 1100 320 920 2 40 50 1.3 x 10 -14 (Typ.) 1.7 x 10 13 (Typ.) 1100 .23 Max. A %/C mV mV/C pA G %/C nF A/W nm nm V Degrees W Hz cm Hz / W
Typ. 45 .12 490 -2.0 .07 -8.0 1.0 .10
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PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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